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| MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HA-H * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, AC servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 53.5 43.3 8 8 B 9 14 E 5.3 36.5 9 C 5.3 8 M4 3.5 B 33 3.5 7 C R6 E 4.5 24 LABEL 22 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 30 30 250 1.8 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 90 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=0.4A -IC=30A (diode forward voltage) IC=30A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=30A, IB1=-IB2=0.6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.85 -- 1.5 12 3.0 0.5 2.0 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 80 IB=2.0A 60 IB=1.0A IB=0.5A 40 IB=0.3A IB=0.1A 20 DC CURRENT GAIN hFE VCE=5.0V VCE=2.0V 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 2.6 Tj=25C VCE=2.0V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 IB=0.4A Tj=25C 5 Tj=125C 4 3 VBE(sat) 2 10 0 7 5 4 3 2 BASE CURRENT IB (A) SATURATION VOLTAGE VCE(sat) 3.0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj=25C Tj=125C 4 10 1 7 5 4 3 2 10 0 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) ts VCC=300V IB1=-IB=0.6A ton tf 3 2 1 IC=10A 0 10 -2 IC=20A IC=30A SWITCHING TIME 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 -1 10 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 VCC=300V IB1=0.6A IC=30A Tj=25C Tj=125C REVERSE BIAS SAFE OPERATING AREA 70 COLLECTOR CURRENT IC (A) ts, tf (s) 60 50 40 30 20 10 Tj=125C 0 0 100 200 300 400 500 600 700 IB2=-1A -3A -5A SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 10 -1 ts tf 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 10 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 90 SECOND BREAKDOWN AREA 0 s 50 C DERATING FACTOR (%) D 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 0 s 10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 0.5 1m s VCE (V) CASE TEMPERATURE TC (C) 0.4 Zth (j-c) (C/ W) 0.3 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 0 0.4 0.8 1.2 1.6 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 Irr (A), Qrr (c) 10 1 7 5 3 2 10 2 Tj=25C Tj=125C VCC=300V IB1=-IB2=0.6A 10 1 Irr trr (s) FORWARD CURRENT IF (A) Feb.1999 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 10 0 7 5 Qrr 3 trr 2 -1 10 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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